| PART |
Description |
Maker |
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 32 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| M5M27C202FP-12 M5M27C202FP-15 M5M27C202J-12 M5M27C |
MB 41C 27#20 14#16 SKT RECP
2097152-BIT(131072-WORD BY 16-BIT) CMOS ONE TIME REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5V216AWG M5M5V216AWG-70LW M5M5V216AWG-55H M5M5V |
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM 2097152位（131072字由16位）的CMOS静态RAM
From old datasheet system
|
http://
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位（131072字由16位）的CMOS电可擦除只读光盘可重复编
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M4V64S30ATP-8A M5M4V64S30ATP-8L |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LC338128M LC338128P LC338128PL LC338128M-80 LC3381 |
1 MEG (131072 words x 8 bit) pseudo-SRAM
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| TC554001 TC554001AF TC554001AF-10 TC554001AF-10L T |
LJT 66C 66#22D PIN PLUG 524228字8位静态RAM
524,228 WORDS x 8 BIT STATIC RAM 524228字8位静态RAM
Circular Connector; No. of Contacts:32; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:19-32 RoHS Compliant: No
524228 WORDS x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MB85415 |
16384 Words x 36-Bit
|
Fujitsu
|
